Course Info
Course Coordinator
Dr. R.A.C.M.M. van Swaaij
About this course
| Study load (hrs) |
| 125 |
| Level |
| Master |
Related information
| Related TU Delft courses |
|
Microelectronics |
| Related resources |
| View related resources from other OCW-sites |
Advanced Device Physics
(ET4296)| Description |
| This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design. Study Goals: This course aims at a thorough understanding of the physics of advanced semiconductor devices. Students are expected to be able to explain the operation of these devices based on the design and material properties. |
