Course Info

Course Coordinator


Dr. R.A.C.M.M. van Swaaij

About this course

Study load (hrs)
125
Level
Master

Related information

Related TU Delft courses
Microelectronics
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Advanced Device Physics

Description
This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design. Study Goals: This course aims at a thorough understanding of the physics of advanced semiconductor devices. Students are expected to be able to explain the operation of these devices based on the design and material properties.

 

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