c-Si – GaAs Hybrid
Course subject(s)
Module 8. Comparing & Combining Technologies
III-V based multijunction devices achieve the highest conversion efficiencies of all available PV technologies, but they require very expensive materials and processing techniques. Therefore researchers are exploring a hybrid device, where a cheaper c-Si bottom cell is combined with a III-V based top cell. In this video you will learn about the device architecture, potential and state of the art c-Si – III-V hybrid devices.
c-Si - GaAs Hybrids
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