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Dr. Ryoichi Ishihara

Ryoichi Ishihara was born in 1967 in Japan. He received the B.E., M. E., and Ph. D. degrees from Department of Physical Electronics, Tokyo Institute of Technology, Japan in 1991, 1993, and 1996, respectively. His main research activities were low-temperature chemical vapor deposition of silicon nitride film, fabrication of amorphous-Si and poly-Si thin-film transistors (TFTs), and excimer-laser crystallization of Si films. Since 1996, he has been with Delft Institute of Microsystems and Nanoelectronics, Delft University of Technology, Delft, The Netherlands, where he is currently an Associate Professor.

His research has been focusing on location control of grains through a novel excimer-laser crystallization process and fabrication and characterization of high-performance TFTs inside a single grain. He is in charge of a number of projects related to laser crystallization of Si film and thin film transistor technologies. He is a member of the Society for Information Display, the Material Research Society, and the Japan Society of Applied Physics. In 2014 he was chair of the 10th International TFT Conference (ITC 2014).

Key publications

R. Ishihara, et al., “Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the μ-Czochralski (grain filter) process”, Journal of Crystal Growth, 299 (2) pp. 316-321 (2007) http://dx.doi.org/10.1016/j.jcrysgro.2006.12.010

T. Chen, R. Ishihara, and K. Beenakker; “Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 9, pp 2348-2352 (2010) http://dx.doi.org/10.1109/TED.2010.2055510

R. Ishihara, et al.,“Single-Grain Si TFTs and Circuits Fabricated Through Advanced Excimer-Laser Crystallization”, Solid State Electronics, Volume 52, (2008), 353-358 http://dx.doi.org/10.1016/j.sse.2007.10.055

R. Ishihara, et al.,”Advanced excimer-laser crystallization process for single-crystalline thin film transistors,” Thin Solid Films, vol. 427, pp. 77-85, (2003) http://dx.doi.org/10.1016/S0040-6090(02)01250-6

R. Ishihara, et al.,: “Effects of Light Pulse-Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin-Films” Jpn. J. Appl. Phys., 34 (1995) 1759. http://dx.doi.org/10.1143/JJAP.34.1759

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