This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design.
This course aims at a thorough understanding of the physics of advanced semiconductor devices. Students are expected to be able to explain the operation of these devices based on the design and material properties.
Advanced Device Physics by TU Delft OpenCourseWare is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
Based on a work at https://ocw.tudelft.nl/courses/advanced-device-physics/.